Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
نویسندگان
چکیده
منابع مشابه
Design and Simulation of a Dual Material Double Gate Tunnel Field Effect Transistor Using Tcad
High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature se...
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A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2011
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2010.2093142